Persistent Photoconductivity in Doping-Modulated a-Si:H Multilayers : Condensed Matter

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概要

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• Effects of high temperature illumination and annealing on persistent photoconductivity (PPC) were investigated in doping-modulated hydrogenated amorphous silicon nipi-multilayers. Room temperature illumination followed by annealing at 385 K resulted in room temperature conductivity considerably reduced from that of an unexposed sample. High temperature (357 K) illumination caused no PPC, but after annealing at 385 K, we observed room temperature conductivity much reduced from that of the unexposed sample. Further, this sample showed PPC critically dependent on the exposure level when illuminated again at room temperature. The PPC-resistive nature induced by high temperature illumination is explained in terms of the Staebler-Wronski (S-W) effect, demonstrating the interplay between the PPC and the S-W effect. Decay kinetics of the PPC is also briefly discussed.

• 社団法人応用物理学会の論文
• 1988-10-20

著者

• Kikuchi Minoru

  Research And Development Center Toshiba Corp.

• KIKUCHI Minoru

  Research and Development Center, Toshiba Corp.

• ITO Hiroshi

  Research and Development Center, Toshiba Corp.

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• Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemieal Vapor Deposition
• Correlation between Si-H_2 Bond Density and Electron Drift Mobility in a-Si:H Films Prepared by Photochemical Vapor Deposition : Condensed Matter
• Persistent Photoconductivity in Doping-Modulated a-Si:H Multilayers : Condensed Matter

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