Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition of SiO_2 and GeO_2-SiO_2 Films for Optical Waveguides Using Tetraethylorthosilicate and Tetramethylgermanium

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SiO_2 and GeO_2-SiO_2 films have been deposited by employing inductively coupled plasma-enahanced chemical vapor deposition (ICP-CVD) from tetraethylorthosilicate (TEOS) and oxygen discharge using tetramethylgermanium (TMGe) as a dopant. A pure SiO_2 film deposited with TEOS:O_2 at a flow rate ratio of 17% and an operating pressure of 5 Pa showed a low wet-etching rate of 114 nm/min approaching that of a thermally grown oxide. Go doped SiO_2 films were deposited at various TMGe flow rates, and it was found that Go was incorporated into the film as a replacement for Si. The refractive index of the film is in proportion to the Ge content in the film. Fourier transform infrared (FTIR) analysis confirmed that there were few O-H and C-H defects in the films. Optical waveguides were fabricated using ICP-CVD and reactive ion etching (RIE). A propagation loss of 0.027 dB/cm at 1.55 μm was achieved for the optical waveguide by using GeO_2-SiO_2 film as the core layer.
社団法人応用物理学会の論文
1999-05-15