Elemental Composition of Reactively Sputtered Indium Nitride Thin Films

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概要

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• Indium nitride (InN) thin films have been grown on a variety of substrates using low-temperature radio frequency reactive sputtering of indium metal in pure nitrogen plasma. Quantitative compositional analyses of the films, carried out using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS), suggest that large amounts of oxigen are present in them. The high concentration of oxygen in our films is attributed to the voided micostructure as revealed by cross-sectional scanning electron microscopy. The XPS studies also suggest that the oxygen incorporated into the films is bonded to nitrogen.

• 社団法人応用物理学会の論文
• 1996-04-15

著者

• Motlan Li

  Semiconductor Science And Technology Laboratories Department Of Physics Macquarie University

• KUMAR Sunil

  Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University

• TANSLEY Trevor

  Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University

• Tansley Trevor

  Semiconductor Science And Technology Laboratories Department Of Physics Macquarie University

• Kumar Sunil

  Semiconductor Science And Technology Laboratories Department Of Physics Macquarie University:(presen

関連論文

• Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AIN Thin Films
• Gamma Induced Centres in Liquid Phase Epitaxial Gallium Arsenide
• A Deep-Level Transient-Conductance Spectrometer for High-Resistivity Semiconductors Using a Marginal Oscillator Detector
• Elemental Composition of Reactively Sputtered Indium Nitride Thin Films

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