Gamma Induced Centres in Liquid Phase Epitaxial Gallium Arsenide

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概要

• 論文の詳細を見る

• Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200℃. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

• 社団法人応用物理学会の論文
• 1993-01-15

著者

• Tansley T

  Macquarie Univ. Nsw Aus

• Butcher Kenneth

  Semiconductor Science And Technology Laboratories Physics Department Macquarie University

• ALEXIEV Dimitri

  Australian Nuclear Science and Technology Organisation

• TANSLEY Trevor

  Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University

• Tansley Trevor

  Semiconductor Science And Technology Laboratories Department Of Physics Macquarie University

• Alexiev D

  Australia Neclera Science And Technology Organisation Nsw Aus

関連論文

• Optical Deep-Level Transient Conductance Characterisation of Semi-Insulating Gallium Arsenide Treated with Hydrogen Plasma
• Gamma Induced Centres in Liquid Phase Epitaxial Gallium Arsenide
• A Deep-Level Transient-Conductance Spectrometer for High-Resistivity Semiconductors Using a Marginal Oscillator Detector
• Calculation of the Response of a Miller Exponential Signal Correlator to ODLTS Signals
• Elemental Composition of Reactively Sputtered Indium Nitride Thin Films

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