A Deep-Level Transient-Conductance Spectrometer for High-Resistivity Semiconductors Using a Marginal Oscillator Detector
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概要
- 論文の詳細を見る
A deep-level transient-conductance spectrometer for high-resistivity semiconductors, using a radiofrequency (∼40 MHz) marginal oscillator as a conductance detector, is described. Spectra are generated by periodically filling deep-level trapping centres with carriers stimulated by a pulsed GaAs laser, and processnng the trap-emptying conductance signal through an exponential Miller correlator as the sample temperature is slowly ramped. Simple capacitive coupling of samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high-temperature techniques necessary for ohmic contact formation. Representative deep-level spectra are given for semi-insulating Bridgman-grown CdTe.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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Tansley T
Macquarie Univ. Nsw Aus
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Butcher Kenneth
Semiconductor Science And Technology Laboratories Physics Department Macquarie University
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Butcher Kenneth
Australian Nuclear Science And Technology Organisation
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ALEXIEV Dimitri
Australian Nuclear Science and Technology Organisation
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TANSLEY Trevor
Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University
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Tansley Trevor
Semiconductor Science And Technology Laboratories Department Of Physics Macquarie University
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Alexiev D
Australia Neclera Science And Technology Organisation Nsw Aus
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