Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AIN Thin Films

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概要

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• Aluminium nitride (AlN) thin films have been grown on a variety of substrates using low-temperature radio frequency reactive sputtering of aluminium in pure nitrogen plasma. Quantitative analyses of the film composition, carried out using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS), suggest the resulting films to be near stoichiometric with high amounts of oxygen present in them. The high concentration of oxygen in our films is attributed to the voided microstructure as revealed by cross-sectional scanning electron microscopy.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• Kumar S

  Christ Church Coll. Kanpur Ind

• KUMAR Sunil

  Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University

• TANSLEY T.

  Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University

• Tansley T.

  Semiconductor Science And Technology Laboratories Macquarie University

• Tansley T.

  Semiconductor Science And Technology Laboratories Physics Department Macquarie University

• Kumar Sunil

  Semiconductor Science And Technology Laboratories Department Of Physics Macquarie University:(presen

関連論文

• Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AIN Thin Films
• Elemental Composition of Reactively Sputtered Indium Nitride Thin Films
• Characterisation of Microcrystalline GaN Grown on Quartz and on Sapphire by Laser and Microwave Plasma Enhanced Metalorganic Chemical Vapour Deposition
• Characterisation of Microcrystalline GaN Grown on Quartz and on Sapphire by Laser and Microwave Plasma Enhanced Metalorganic Chemical Vapour Deposition

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