Characterisation of Microcrystalline GaN Grown on Quartz and on Sapphire by Laser and Microwave Plasma Enhanced Metalorganic Chemical Vapour Deposition

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概要

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• We present a comparative study of GaN grown on quartz and on sapphire by laser assisted metalorganic chemical vapour deposition. Films were characterised by X-ray diffraction, Raman spectroscopy and optical transmission. Films grown on both substrates are polycrystalline, with the dominant orientation of (0002) wurtzite or (111) cubic for growth temperatures 550°C and lower. In films grown at 625°C, both on quartz and on sapphire the crystallites show a variety of orientations, all attributed exclusively to wurtzite phase. Films grown at the same temperature are characterised by similar value of the Urbach parameter for both substrates. The Raman spectra in all examined films are alike, and characteristic for a disordered cubic GaN.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-02-15

著者

• Tansley T.

  Semiconductor Science And Technology Laboratories Macquarie University

• Paterson Melissa

  Semiconductor Science And Technology Laboratories Macquarie University

• Goldys E.

  Semiconductor Science And Technology Laboratories Macquarie University

• Zuo H.

  Semiconductor Science And Technology Laboratories Macquarie University

• Goldys E.

  Semiconductor Science and Technology Laboratories, Macquarie University, North Ryde, 2109 NSW, Australia

関連論文

• Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AIN Thin Films
• Characterisation of Microcrystalline GaN Grown on Quartz and on Sapphire by Laser and Microwave Plasma Enhanced Metalorganic Chemical Vapour Deposition
• Characterisation of Microcrystalline GaN Grown on Quartz and on Sapphire by Laser and Microwave Plasma Enhanced Metalorganic Chemical Vapour Deposition

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