In_<0.52>Al_<0.48>AS/In_xGa_<1-x>As (0.53<x<1.0) Pseudomorphic High Electron Mobility Transistors with High Breakdown Voltages : Design and Performances

スポンサーリンク

概要

著者

関連論文

In_Al_AS/In_xGa_As (0.53
Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. II : On-State
Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. I: Off-State
Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications
Analytical Model to Determine the Gate Leakage Current in In_Al_AS/In_xGa_As Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission
The Backside Pulse Doped Channel Heterostructure Field-Effect Transistor: Design, DC, and RF Performance

スポンサーリンク