The Backside Pulse Doped Channel Heterostructure Field-Effect Transistor: Design, DC, and RF Performance

スポンサーリンク

概要

• 論文の詳細を見る

• We report about a theoretical and experimental study of AlGaAs/InGaAs modulation doped field-effect transistors (MODFETs) having doped channels. On the basis of self consistent calculations we suggest design rules of where to introduce the channel doping into the channel to obtain high speed devices with high saturation currents and reasonable low noise performance. For a 0.35 μm gate length backside pulse doped channel device (BSPDC-HFET) with 120 μm gate width a maximum transconductance of 625 mS/mm and a maximum saturation current at V_<GS>=+0.8 V of 720 mA/mm have been measured. The cut-off frequencies are f_T=80 GHz, f_<max>=195 GHz. At 18 GHz a minimum noise figure of NF=1.1 dB with 17 dB associated gain were measured.

• 社団法人応用物理学会の論文
• 1993-01-15

著者

• Dickmann J

  Daimler‐benz Ag Ulm Deu

• Dickmann Juergen

  Daimler-benz Ag Research Center Ulm

関連論文

• In_Al_AS/In_xGa_As (0.53
• Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. II : On-State
• Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. I: Off-State
• Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications
• The Backside Pulse Doped Channel Heterostructure Field-Effect Transistor: Design, DC, and RF Performance

スポンサーリンク