Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_<1-x>As High Electron Mobility Transistors on InP. I: Off-State

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-01-15

著者

• Maile B

  Xlith Gmbh Illerrieden Deu

• Schurr Anton

  Daimler-benz Research Center Ulm

• DICKMANN Jurgen

  Daimler-Benz Research Center Ulm

• RIEPE Klaus

  Daimler-Benz Research Center Ulm

• GEYER Arthur

  Daimler-Benz Research Center Ulm

• MAILE Bernd

  Daimler-Benz Research Center Ulm

• SCHILDBERG Steffen

  University of Rostock, Department of Insulator-Physics

• NAROZNY Peter

  Daimler-Benz Research Center Ulm

• Schildberg Steffen

  University Of Rostock Department Of Insulator-physics

• Dickmann J

  Daimler‐benz Ag Ulm Deu

関連論文

• In_Al_AS/In_xGa_As (0.53
• Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. II : On-State
• Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. I: Off-State
• Analytical Model to Determine the Gate Leakage Current in In_Al_AS/In_xGa_As Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission
• The Backside Pulse Doped Channel Heterostructure Field-Effect Transistor: Design, DC, and RF Performance

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