Analytical Model to Determine the Gate Leakage Current in In_<0.52>Al_<0.48>AS/In_xGa_<1-x>As Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission

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概要

• 論文の詳細を見る

• The gate leakage current of pulse doped In_<0.52>Al_<0.48>AS/In_xGa_<1-x>As pseudomorphic modulation doped field-effect transistors (MODFETs) is analysed by thermionic field emission theory. For the first time, a theoretically based investigation of the leakage current for this type of device is carried out. The influence of parameters of the layer structure design on the gate leakage current such as the thickness of the barrier layer or the doping concentration in the supply layer is predicted. The model adequately predicts the experimental decrease in leakage current with increased thickness of the barrier layer and reduced doping concentration.

• 社団法人応用物理学会の論文
• 1994-04-15

著者

• DICKMANN Jurgen

  Daimler-Benz Research Center Ulm

• DAEMBKES Heinrich

  Daimler-Benz Research Center Ulm

• SCHILDBERG Steffen

  University of Rostock, Department of Insulator-Physics

• Schildberg Steffen

  University Of Rostock Department Of Insulator-physics

• Daembkes H

  Daimler‐benz Res. Center Ulm Ulm Deu

• FITTNG Hans-Joachim

  University of Rostock, Department of Insulator-Physics

• ELLROD Peter

  University of Duisburg, Semiconductor Technique

• TEGUDE Franz

  Technology

• Ellrod Peter

  University Of Duisburg Semiconductor Technique

• Fittng Hans-joachim

  University Of Rostock Department Of Insulator-physics

関連論文

• In_Al_AS/In_xGa_As (0.53
• Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. II : On-State
• Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. I: Off-State
• Analytical Model to Determine the Gate Leakage Current in In_Al_AS/In_xGa_As Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission

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