Discussion on Scanning Tunneling Microscopy Images with Resonant Tunneling Model
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概要
- 論文の詳細を見る
We apply a resonant tunneling model to explain various scanning tunneling microscopy (STM) images. The resonant tunneling model is used for determining the negative differential resistance characteristics of current-voltage (I-V) and STM images. We calculate the I-V characteristics of the resonant tunneling structure in STM system, and examine the relationship between the I-V characteristics and the anomalous STM images. Our results suggest that the resonant tunneling model can explain the anomalous STM images, for example, a reverse contrast image, and high and low magnification images.
- 社団法人応用物理学会の論文
- 1995-10-15
著者
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Okuda Masahiro
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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Okuda Masahiro
Department Of Anesthesiology Mie University School Of Medicine
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Yagi Yoshikazu
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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INABA Hirokazu
Department of Physics and Electronics, College of Engineering, University of Osaka Prefecture
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Inaba Hirokazu
Department Of Electronics University Of Osaka Prefecture
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Inaba Hirokazu
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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