Capacitance-Voltage Characteristics of Au/PrBa_2Cu_3O_y/YBa_2Cu_3O_x Structure Measured at 4.2 K
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概要
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Capacitance-Voltage (C-V) characteristics of Au/PrB_2 Cu_3O_y/YB_2Cu_3O_x structure were studied. YBa_2Cu_3O_x and PrBa_2Cu_3O_y were deposited by rf magnetron sputtering. Deposition temperatures were 700℃ for YBa_2Cu_3O_x and 690℃ for PrBa_2Cu_3O_y. Capacitance was measured at liquid-helium temperature. At this temperature PrBa_2Cu_3O_y behaves as an insulator, and C-V characteristics of Au/PrBa_2Cu_3O_y/YBa_2Cu_3O_x as a MIS diode can be measured. From analyses of C-V characteristics, a depletion layer was found to exist near the PrBa_2Cu_3O_y/YBa_2Cu_3O_x interface when DC bias was zero. The acceptor density of this layer was calculated to be about 10^<16>/cm^3 from C-V characteristics.
- 社団法人応用物理学会の論文
- 1995-05-15
著者
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Ohmameuda Toshiaki
Research Center For Advanced Science And Technology The University Of Tokyo
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Okabe Yoichi
Research Center For Advanced Science And Technology The University Of Tokyo
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- Capacitance-Voltage Characteristics of Au/PrBa_2Cu_3O_y/YBa_2Cu_3O_x Structure Measured at 4.2 K
- Capacitance and Resistance Measurement of Au/PrBa_2Cu_3O_y/YBa_2Cu_3O_x Structure at 4.2 K