Improvement of the Stability of Hydrogenated Amorphous Silicon by Hydrogen Plasma Treatment

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概要

• 論文の詳細を見る

• The effect of post-deposition treatment by a hydrogen plasma on the structural properties, electrical properties and in particular, the stability under sunlight illumination, of device-quality intrinsic hydrogenated amorphous sillcon films is described. Comparison is made with samples annealed in hydrogen gas under similar conditions. Reduction of the light-induced degradation is observed after plasma treatment, by an amount depending on the treatment temperature, plasma rf power and treatment time.

• 社団法人応用物理学会の論文
• 1994-09-15

著者

• YAMAGISHI Hideo

  Department of Biophysics, Graduate School of Science, Kyoto University

• Yamagishi Hideo

  Central Research Laboratories Kaneka Corporation

• TAWADA Yoshihisa

  Central Research Laboratories, Research Institute, KANEKA CORPORATION

• Tawada Y

  Kaneka Corp. Shiga Jpn

• NEVIN W.

  Central Research Laboratories, Kaneka Corporation

• Nevin W.

  Central Research Laboratories Kaneka Corporation

• Tawada Yoshihisa

  Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd.

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