Thermal Degradation of a-Si:H Solar Cells by Dopant Diffusion

概要

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In glass/TCO/p(a-SiC:H)-i-n/Cr type hydrogenated amorphous silicon solar cells fabricated by a rf glow-discharge decomposition method, it was observed that the photocurrent in the short-wave length region mainly decreased after a thermal treatment of the sample. In terms of a simple model in which the dopant diffusion makes a dead layer near the p/i interface, the phenomenon of the photocurrent decrease is discussed. The dopant diffusion coefficients and the lifetimes of the solar cells were estimated.
社団法人応用物理学会の論文
1987-06-20