Diffusion Behavior of Point Defects in Si Crystal during Melt Growth IV : Numerical Analysis

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概要

• 論文の詳細を見る

• This paper describes a numerical analysis technique for the solution of the phenomenological diffusion equations of point defects in silicon single crystals during melt growth. The calculation, which assumes an entropy barrier against the pair annihilation reaction between point defects (self-interstitials and vacancies), gives a distribution of point defects which closely agrees with the distribution of grown-in crystal defects observed in CZ-crystals

• 社団法人応用物理学会の論文
• 1994-03-15

著者

• HABU Ryuichi

  Electronics Research Laboratories, Technical Development Bureau, Nippon Steel Corporation

• TOMIURA Azusa

  Technical Development Bureau, Nippon Steel Corporation

• Habu R

  Nippon Steel Corp. Kawasaki Jpn

• Habu Ryuichi

  Electronics Research Laboratories Nippon Steel Corporation:(present Address)technical Research Cente

• Tomiura A

  Nippon Steel Corp. Kawasaki Jpn

• Iwasaki T

  Univ. Electro‐communications Tokyo Jpn

• Harada H

  Yamaguchi Univ. Ube Jpn

• IWASAKI Toshio

  Electronics Research Laboratories, Technical Development Bureau, Nippon Steel Corporation

• HARADA Hirohumi

  Crystal Growth Technical Group, Manufacturing Department, NSC Electron Corporation

• Tomiura Azusa

  Technical Development Bureau Nippon Steel Corporation

• Iwasaki Toshio

  Electronics Research Laboratories Technical Development Bureau Nippon Steel Corporation

関連論文

• The Nature of Nitrogen-Oxygen Complexes in Silicon
• Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
• Diffusion of Point Defects in Silicon Crystals during Melt-Growth. III : Two Diffusor Model
• Diffusion of Point Defects in Silicon Crystals during Melt-Growth. II : One Diffusor Model
• Diffusion Behavior of Point Defects in Si Crystal during Melt Growth IV : Numerical Analysis
• Diffusion of Point Defects in Silicon Crystals during Melt-Growth. I : Uphill Diffusion
• Mossbauer Study of Fe-Zr Alloys Formed at Interfaces between Fe and Zr Thin Films
• Mossbauer Study of Fe-Ti Alloys Formed at Interfaces between Fe and Ti Thin Films
• Distribution of Grown-in Crystal Defects in Silicon Crystals Formed by Point Defect Diffusion during Melt-Growth : Disappearance of the Oxidation Induced Stacking Faults-Ring

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