Properties of the Nb Thin-Film Nanobridges Prepared by Nanometer Fabrication Process
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概要
- 論文の詳細を見る
We describe the properties of Nb thin-film nanobridges fabricated by means of our original nanometer-scale process. Our original nanofabrication techniques include the synthesis of a new electron beam (EB) resist and the use of CBrF_3 as an etchant for reactive ton etching (RIE). Fabricated nanobridges have high sensitivity of radiation and high reliability. It is observed that the properties of nanobridges can be changed by varying the bridge length and its thickness. We have also fabricated the series arrays and observed that they operate coherently.
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Harada Yuichi
Department Of Applied Electronics Tokyo Institute Of Technology
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Sekine Matsuo
Department Of Applied Electronics Tokyo Institute Of Technology
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Hirose N
Department Of Electrical And Electronic Engineering Ibaraki University
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Hirose Nobumitsu
Department Of Physical Electronics Tokyo Institute Of Technology
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UZAWA Yoshinori
CRL Kansai Advanced Research Center
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HIROSE Nobumitsu
Department of Electrical and Electronic Engineering, Ibaraki University
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