Temperature-Modulated Semiconductor Laser for Widely Tunable and Power-Controlled Operation
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概要
- 論文の詳細を見る
We describe a widely tunable, power-controlled oscillation method of AlGaAs semiconductor lasers in the visible region, based on temperature modulation by a microheater placed on the laser chip. The continuous frequency tuning range for a single-axial-mode operation is extended to 0.28 nm (132 GHz) at 779 nm by the heater current modulation. Cutoff frequency of the temperature modulation response is 50 Hz. The injection current is used mainly for the power control of the FM oscillation. By using a short external mirror for axial mode selection, the continuous tuning range is further increased to 0.49 nm (237 GHz), which corresponds to almost five times the value with the injection current modulation.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
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Kobayashi Takao
Department Of Bioregulatory Function Graduate School Of Medicine The University Of Tokyo
-
Jiang Shudong
Department Of Electrical And Electronic Engineering Fukui University:(present Address) Graduate Scho
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Kobayashi Takao
Department Of Electrical And Electronic Engineering Fukui University
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