A Mass Spectrometric Study of the Decomposition of Trimethylgallium (TMGa) with Trimethylarsine (TMAs)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Hoshino M
Fujitsu Laboratories Ltd.
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HOSHINO Masataka
Fujitsu Laboratories Ltd.
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Hoshino Masataka
Fujitsu Laboratories Lid.
関連論文
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- Surface Morphology and Line Fill Properties of Gold Grown by Organometallic Chemical Vapor Deposition
- A Mass Spectrometric Study of the Decomposition of Trimethylgallium (TMGa) with Trimethylarsine (TMAs)
- Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Growth of InGaAsP Quaternary by Chloride VPE
- Pyrolysis of Trimethylgallium on GaAs Surfaces Observed by Pulse Surface Reaction Rate Analysis