Ge-Si n-n Heterojunctions

概要

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Ge-Si n-n heterojunctions have been fabricated by epitaxial vapour growth process of hydrogen reduction of germanium tetrachloride. They have a good rectification property and a short switching time less than a few nano-seconds. In the junction there exists a double Schottky barrier due to interface states, which capture electrons more than 1.5×10^<13> cm^<-2> as acceptor-like states. The voltage-current characteristics have been measured at temperatures between 77°K and 300°K. In the low voltage region of easy flow direction (Germanium positively biased), d (log I)/d V is independent of temperature, but in the higher voltage region it is proportional to q/kT. The reverse characteristics (Germanium negatively biased) are divided into three separate regions, which are I∝V^<0.7〜0.8>, I∝V^<3/2> and I∝exp (BV) in the order of magnitude of reverse bias voltage, where B is a constant depending on temperature and donor concentration of silicon. The conduction mechanisms of this heterojunction have been discussed qualitatively.
社団法人応用物理学会の論文
1969-09-05