Evaluation of Surface States at Si-SiO_2 Interface from the Characteristics of P-Type MOS Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-08-15
著者
-
Horiuchi Shiro
Faculty Of Engineering Science Osaka University
-
Yamaguchi Jiro
Faculty Of Engineering Kansai University
関連論文
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- Effect of Heat Treatment on Electrical Conduction in DPPH Single Crystals Grown from Benzene Solution
- Effect of Heat Treatment on Crystal Structure of DPPH Single Crystals Grown from Benzene Solution
- Hyperfine Interaction in Mixed Crystal of DPPH and DPPH_2 Studied by ESR
- Electrical and Magnetic Properties of DPPH Iodine Charge Transfer Complex
- Electron Spin Resonance in Diluted Copper Phthalocyanine
- Uniaxial Stress Effects on Electrical Conductivity of DPPH Single Crystal
- Microwave Emission from Germanium Slice in a Transverse Magnetic Field
- Dislocation Deny Zone around the Grain Boundary of Silicon Bicrystals
- X-Ray Analysis of Interface Layer in Ge-Si n-n Heterojunction
- Evaluation of Surface State at Oxidized Silicon from the Characteristics of Surface Varactor Diode
- High Electric Field Effects in Germanium p-n Junction
- Barrier Temperature at Turnover in Germanium p-n Junction
- Ge-Si n-n Heterojunctions
- Instability Associated with the Gradient of Carrier Density in Germanium Slice
- Enhanced Carrier Diffusion Associated with the Instability in Germanium Slice
- Current Oscillation in Germanium Slice in a Transverse Magnetic Field
- Transverse Magnetic Field Effect on Carrier Injection into Germanium Slice
- Negative Magnetoresistance of Boat Grown GaAs
- On the Blocking Layer of Selenium Rectifier (II)
- On the Inductive Reactance and Negative Resistance in the Transistor
- An Electron Diffraction Study on Seleniun Rectifiers.
- On the Blocking Layer of Selenium Rectifier (I)
- Electrical Dispersion of Selenium Rectifier at High Frequency
- Evaluation of Surface States at Si-SiO_2 Interface from the Characteristics of P-Type MOS Diodes