Anomalous Etch Rate of Silicon Nitride Films Made from SiCl_4-NH_3-H_2 System

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1968-04-05

著者

• Oka Yoshio

  Sony Corporation Research Laboratory

• Shohno Katsufusa

  Sony Corporation Research Laboratory

関連論文

• Dielectric Constant of PbTe
• Anomalous Etch Rate of Silicon Nitride Films Made from SiCl_4-NH_3-H_2 System
• Gate Controlled Si PIN-Structure
• Infrared Absorption of Si Oxide Films Made by Oxidation of Silane
• Crystal Structure Determination of SbSI
• Atomic Parameters in Ferroelectric SbSI
• Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes

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