Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes

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概要

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• The silicon pin-diode in which the width of i-region is from 6 to 12 times the diffusion length shows negative resistance in the forward direction. The current in the forward direction can be interpreted as a mixture of the field-dominated currents and the diffusion-dominated currents. The negative resistance appears to be due to the transition from the diffusion current in a long pin-diode (off-state) to the diffusion current in a shot pin-diode (on-state). Theoretically, the decrease in the applied voltage in the i-region at the onset of the negative resistance is given by V_B=2(kT/e)×[exp (W/2L)+W/2L], where W is the width of the i-region and L is the ambipolar diffusion length. This expression agrees with the experimental result.

• 社団法人応用物理学会の論文
• 1966-05-15

著者

• Shohno Katsufusa

  Sony Corporation Research Laboratory

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• Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes

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