Gate Controlled Si PIN-Structure

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概要

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• Si pin-diodes with nearly intrinsic region have negative resistance in the forward direction when the ratio W/L is 6-12, where W is the width of i-region and L the ambipolar diffusion length. The threshold voltage V_T for giving the negative resistance varies in the wide range from 1 to 200 V, strongly depending on the ratio W/L. It is found that the threshold voltage V_T can be decreased by a gate on the i-region. The necessary condition to turn on the diode is that the gate current I_G increases up to a threshold current I_T for giving the negative resistance. By observing the transient behaviour of the gate current, two processes are found to occur succeedingly in the turn-on process. The first process is the increase of current due to the injection of carriers up to the threshold current acting as a trigger to turn on the diode. The second process brings whole the i-region to negative resistance by filling up the recombination centers from cathode to anode.

• 社団法人応用物理学会の論文
• 1966-05-15

著者

• Shohno Katsufusa

  Sony Corporation Research Laboratory

• Shohno Katsufusa

  Sony Corporation Research Laboretory

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• Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes

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