Infrared and X-Ray Observation of Copper Extraction from Copper Decorated Dislocations in Silicon Crystal

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概要

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• Copper extraction from copper decorated dislocations in silicon crystal is investigated using infrared microscopy and X-ray topography. The extraction is carried out by heat treatment of copper saturated silicon samples in contact with a tin-lead solution at 950℃. The extraction phenomenon is explained by the greater solubility of copper in the tin-lead solution than in silicon at the working temperature. After the extraction, no dislocation images are observed by infrared microscopy, but dislocations with modified contrast are sensitively observed by X-ray topography. After the observations, re-diffusion of copper into the sample is carried out. Infrared observation shows that dislocations at the same position as before are successfully re-decorated with copper.

• 社団法人応用物理学会の論文
• 1980-09-05

著者

• IIZUKA Takashi

  The Electrotechnical Laboratory

• KIMURA Hiroshi

  The Electrotechnical Laboratory

• Kimura Hiroshi

  The Electrotechnical Laboratory:(present) Central Research Laboratory Mitsubishi Electric Corp.

関連論文

• Study of Scratch-Induced Mechanical Damage on Silicon (111) Surfaces
• Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method
• Asymmetry in Indentation-Induced Mechanical Damage on Si (111) Surfaces
• Infrared and X-Ray Observation of Copper Extraction from Copper Decorated Dislocations in Silicon Crystal

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