Asymmetry in Indentation-Induced Mechanical Damage on Si (111) Surfaces

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概要

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• Asymmetry in indentation-induced mechanical damage on Si (111) surfaces is investigated by using optical microscopy and X-ray diffraction topography. Cracks, residual strain fields and anneal-induced dislocation rosettes around the indentation are found to represent the asymmetries in the [112] and reverse [112] directions on the (111) surface. The crack formation along three <112> directions and the residual strain field distribution along <112> directions are discussed in terms of dislocation reaction and silicon crystal structure, respectively.

• 社団法人応用物理学会の論文
• 1994-03-15

著者

• IIZUKA Takashi

  The Electrotechnical Laboratory

• OKADA Yasumasa

  The Electrotechnical Laboratory

関連論文

• Study of Scratch-Induced Mechanical Damage on Silicon (111) Surfaces
• Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method
• Asymmetry in Indentation-Induced Mechanical Damage on Si (111) Surfaces
• Infrared and X-Ray Observation of Copper Extraction from Copper Decorated Dislocations in Silicon Crystal

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