Crystallographic Observations and Electroluminescence of Liquid Phase Epitaxial Al_xGa_<1-x>P Alloys

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概要

• 論文の詳細を見る

• The ternary III-V compound alloy Al_xGa_<1-x>P has been prepared by liquid phase epitaxy using GaP as substrate. X-ray topography indicates that no dislocations have been observed in the layer with a composition that is less than about 0.3, whereas in the layer with x over about 0.5, dislocations have arisen close to the surface. Peak energies of the electroluminescence from the layers have all been shorter than that of GaP. In the layer having x=0.82, the shortest wave-length of 532 nm has been obtained, which is pure green for the human eye.

• 社団法人応用物理学会の論文
• 1980-06-05

著者

• Miyauchi Takeshi

  College Of Engineering University Of Osaka Prefecture

• Sonomura Hajimu

  College Of Engineering University Of Osaka Prefecture

• HIDAKA Motoki

  College of Engineering, University of Osaka Prefecture

• NAKAHIGASHI Kiyotaka

  College of Integrated Arts and Sciences, University of Osaka Prefecture

• Hidaka Motoki

  College Of Engineering University Of Osaka Prefecture:(present Address)r & D Center Semiconducto

• Nakahigashi Kiyotaka

  College Of Integrated Arts And Sciences University Of Osaka Prefecture

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• Photovoltaic Effect and Luminescences of Al_xGa_Sb Ternary Alloy Semiconductors
• Composition Deviation and Its Effect on Lattice Constant in Pseudoquaternary Compound Alloy System
• High Excitation Luminescences of Al_xGa_P Compound Alloy
• Preparation of Gallium Antimonide by Solution-Growth Method
• Electrical Conductivity and Optical Properties of Solution-Grown Ga_xIn_P Alloys
• Synthesis and Some Properties of Solid Solutions in the GaP-ZnS and Gap-ZnSe Pseudobinary Systems
• Crystallographic Observations and Electroluminescence of Liquid Phase Epitaxial Al_xGa_P Alloys
• Luminescences from Solution-Grown Al_xGa_P Alloys
• Application of Sintering Method to Prepare perfectly Densified and Oriented CuInS_2 Crystals : Condensed Matter

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