Luminescences from Solution-Grown Al_xGa_<1-x>P Alloys

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概要

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• Single crystals of Al_xGa_<1-x>P alloys with several compositions up to x=0.74 are prepared by the solution growth method. Photoluminescence peaks at 77 K lie at about 1.96 eV for undoped n-type alloys, and near 2.1 eV for Zn-doped p-type alloys. The peaks show almost no shift as x increases. Zn-doped p-type alloys also exhibit electroluminescence when carriers are injected into the crystals. The peak energy nearly follows the energy gap with increasing x, in contrast to the photoluminescences. The photoluminescent emissions are assigned to the Si-Si pair for the 1.96 eV peak, and to Si-Zn and Si-C pairs for the 2.1 eV peaks. Transitions of free electrons to neutral Zn acceptors might play a role in the electroluminescence. The conductivities of the alloys are of the same order as that of GaP.

• 社団法人応用物理学会の論文
• 1979-03-05

著者

• Miyauchi Takashi

  College Of Engineering University Of Osaka Prefecture

• Sonomura Hajimu

  College Of Engineering University Of Osaka Prefecture

関連論文

• Photovoltaic Effect and Luminescences of Al_xGa_Sb Ternary Alloy Semiconductors
• Composition Deviation and Its Effect on Lattice Constant in Pseudoquaternary Compound Alloy System
• High Excitation Luminescences of Al_xGa_P Compound Alloy
• Electrical Conductivity and Optical Properties of Solution-Grown Ga_xIn_P Alloys
• Synthesis and Some Properties of Solid Solutions in the GaP-ZnS and Gap-ZnSe Pseudobinary Systems
• Crystallographic Observations and Electroluminescence of Liquid Phase Epitaxial Al_xGa_P Alloys
• Luminescences from Solution-Grown Al_xGa_P Alloys

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