Electrical Conductivity and Optical Properties of Solution-Grown Ga_xIn_<1-x>P Alloys

概要

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GaxIn_<1-x>P alloys are prepared by the solution growth method using In as a solvent. The composition x of the alloys nearly agrees with the atomic ratio of Ga to P in the initial mixture. The electrical conductivity of the alloys varies with composition from several tens of ohm-<-1> cm^<-1> at x=0 to a few ohm^<-1> cm^<-1> at x=1. A plot of the energy gap against composition exhibits some deviation from linearity. Photoluminescent spectra shift to the higher energy side with composition. The emissions for the InP rich alloys may be ascribed to band-to-band or band-to-shallow impurity state recombinations.
社団法人応用物理学会の論文
1973-09-05