Preparation of Gallium Antimonide by Solution-Growth Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-04-15
著者
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MIYAUCHI Takeshi
College of Engineering, University of Osaka Prefecture
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Miyauchi Takeshi
College Of Engineering University Of Osaka Prefecture
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SONOMURA Hazimu
College of Engineering, University of Osaka Prefecture
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Sonomura Hazimu
College Of Engineering University Of Osaka Prefecture
関連論文
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- Photovoltaic Effect and Luminescences of Al_xGa_Sb Ternary Alloy Semiconductors
- A New Method for Measuring Optical Activity in Crystals and Its Application to Quartz
- Optical Band-Pass Filter Using Accidental Isotropy and Optical Activity of AgGaSe_2
- Composition Deviation and Its Effect on Lattice Constant in Pseudoquaternary Compound Alloy System
- High Excitation Luminescences of Al_xGa_P Compound Alloy
- Piezoelectric Coefficients of AgGaSe_2
- Linear Electro-Optic Effect of AgGaSe_2
- Natural Optical Activity of AgGaSe_2. : CHALCOPYRITES : ELECTRICAL AND OPTICAL PROPERTIES
- Preparation of Gallium Antimonide by Solution-Growth Method
- Electrical Conductivity and Optical Properties of Solution-Grown Ga_xIn_P Alloys
- Synthesis and Some Properties of Solid Solutions in the GaP-ZnS and Gap-ZnSe Pseudobinary Systems
- Crystallographic Observations and Electroluminescence of Liquid Phase Epitaxial Al_xGa_P Alloys
- Application of Sintering Method to Prepare perfectly Densified and Oriented CuInS_2 Crystals : Condensed Matter