Electrical Resistance Decay and Structural Change of Au-Si Thin Films Induced by Air

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The electrical resistance of Au-Si films deposited at room temperature decreases very rapidly after having been exposed to air. The resistance decrease amounts to more than 60% of the initial value after the aging time of 1000 minutes at room temperature. Electrical resistance measurement and electron diffraction and microscope observation under increasing temperature in air or in vacuum reveal that oxgen plays a dominant role in this phenomenon. In an oxidizing atmosphere, low temperature migration of Si atoms toward the surface takes place preferentially. As a result of such migration, the electrical resistance of the film decreases and approaches that of pure Au. In vacuum, phase separation of Au-Si films into pure Si and pure Au takes place by heating, and the electrical resistance also decreases. The activation energies of Si migration and phase separation in Au-Si films are roughly estimated to be about 18 kcal/mol and 30 kcal/mol, respectively.
社団法人応用物理学会の論文
1977-07-05