The Effect of Planar Sinks on the Interstitial Loop Growth under High Temperature Neutron Irradiation

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概要

• 論文の詳細を見る

• The role of planar sinks such as surfaces and grain boundaries for the defect structure developments was studied in fission neutron irradiated Ni and Ni alloys of 2 at% Si, Cu, Ge and Sn to the dose of 4x10^<23>n/m^2 (>1MeV) at 573 K by comparison between thin foil irradiation and bulk irradiation. The number density of interstitial loops increases and then decreases with the increase of distance from planar sinks. Observed defect structure developments were interpreted in terms of the variation of point defect concentration with the change of sink efficiency. The necessity of the introduction of cascade localization induced bias effect is emphasized.

• 東北大学の論文
• 1991-03-05

著者

• Kojima Satoshi

  Department Of Cardiology Juntendo Shizuoka Hospital

• Kojima Satoshi

  Department Of Nuclear Engineering School Of Engineering Nagoya University

• Yoshiie T

  Kyoto Univ. Osaka Jpn

• Yoshiie Toshimasa

  Department Of Material Physics Faculty Of Engineering Science Osaka University

• KIRITANI Michio

  Department of Nuclear Engineering, School of Engineering, Nagoya University

• Satoh Yuhki

  Department Of Pharmacy Oita University Hospital

• Satoh Yuhki

  Department Of Nuclear Engineering School Of Engineering Nagoya University

• Hamada Kohichi

  Department of Precision Engineering, Faculty of Engineering, Hokkaido University

• Hamada K

  Institute Of Atomic Energy Kyoto University

• Kojima S

  Nihon Univ.

• Kiritani M

  Department Of Electronic Engineering Hiroshima Institute Of Technology

• Kiritani Michio

  Department Of Electrnics Hiroshima Institute Of Technology

• Kojima Satoshi

  Department Bf Physics Faculty Of Science And Engineering Ritsumeikan University

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