Analysis of Degradation Behavior of a Gunn Diode Based on the Dislocation Acceptor Theory

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概要

• 論文の詳細を見る

• Degradation of a Gunn diode in an accelerated aging test has been investigated. A Gunn diode incorporating an Ag heat sink (Ag-HS), instead of a conventional Cu-HS, is prepared in order to reduce contact degradation. RF power decrease accompanied by low-field resistance increase has been recognized to be the most dominant degradation mode. Magnetoresistance measurement is used to obtain information on aging behavior of GaAs bulk. Change in carrier concentration and mobility has been analysed based on the Read theory for dislocation acceptors. RF power decrease has been quantitatively explained in terms of carrier removal due to dislocation generation in GaAs active layer.

• 社団法人応用物理学会の論文
• 1977-10-05

著者

• Wada Yoshinori

  Musashino Electrical Communication Laboratory Ntt

• FUKUDA Kaneharu

  Musashino Electrical Communication Laboratory, NTT

• Fukuda Kaneharu

  Musashino Electrical Communication Laboratory Ntt

関連論文

• Analysis of Degradation Behavior of a Gunn Diode Based on the Dislocation Acceptor Theory
• A Degradation Mechanism for Ohmic Contacts in GaAs Devices
• Study on Reliability Factors of GaAs Devices with Plated Heat Sink

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