A Degradation Mechanism for Ohmic Contacts in GaAs Devices

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概要

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• Investigations have been conducted to study how reliability of ohmic contacts in GaAs devices is affected by a metal which is in contact with the ohmic contacts, such as a heat sink metal or a bonding pad metal. Ti and Pt, besides Cu, have been found to enhance electrical characteristics degradation of the contacts in aging tests. Metallurgy of the contact region upon aging is analysed with the aid of electron probe micro-analysis and is correlated with change in the electrical characteristics of the contacts. The degradation mechanism has been confirmed wherein the highly doped. GaAs surface layer, which is essential for "ohmic" contacts, is gradually consumed, due to GaAs reaction with the metal which is in contact with the ohmic contacts.

• 社団法人応用物理学会の論文
• 1977-10-05

著者

• Wada Yoshinori

  Musashino Electrical Communication Laboratory Ntt

• Chino Ken'ichi

  Musashino Electrical Communication Laboratory Ntt

関連論文

• Analysis of Degradation Behavior of a Gunn Diode Based on the Dislocation Acceptor Theory
• A Degradation Mechanism for Ohmic Contacts in GaAs Devices
• Study on Reliability Factors of GaAs Devices with Plated Heat Sink

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