Magnetic and Electrical Properties of N-Channel MOS Hall-Effect Device
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-04-05
著者
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YAGI Atsuo
Semiconductor Division, SONY Corpolation
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Yagi Atsuo
Semiconductor Development Division Central Research Laboratory Sony Corporation
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SATO Shuichi
Semiconductor Development Division, Central Research Laboratory, SONY Corporation
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Sato Shuichi
Semiconductor Development Division And Research Center Sony Corporation
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Sato Shuichi
Semiconductor Development Division Central Research Laboratory Sony Corporation:(present Address) Ca
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