Proposal and Study of Variable Distributed Parameter Devices (VDPD) : A-6: MOS FIELD EFFECT TRANSISTORS
スポンサーリンク
概要
著者
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Yamada Takaaki
Semiconductor Development Division And Research Center Sony Corporation
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SATO Shuichi
Semiconductor Development Division, Central Research Laboratory, SONY Corporation
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Sato Shuichi
Semiconductor Development Division And Research Center Sony Corporation
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HIRABAYASHI Makoto
Semiconductor Development Division and Research Center, SONY Corporation
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KIKUCHI Makoto
Semiconductor Development Division and Research Center, SONY Corporation
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Hirabayashi Makoto
Semiconductor Development Division And Research Center Sony Corporation
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Hirabayashi Makoto
Semiconductor Development Dep. Research Center Sony Corp.:(present Position)material Lab. Research C
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Kikuchi Makoto
Semiconductor Development Division And Research Center Sony Corporation
関連論文
- Magnetic and Electrical Properties of N-Channel MOS Hall-Effect Device
- Proposal and Study of Variable Distributed Parameter Devices (VDPD) : A-6: MOS FIELD EFFECT TRANSISTORS
- A New Field Effect Attenuator with Distributed Structure for Differential Signals