A New Field Effect Attenuator with Distributed Structure for Differential Signals

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概要

• 論文の詳細を見る

• A new field effect attenuator with distributed source and drain structure has been developed. Its structure is similar to that of a conventional MOSFET. In addition to the drain electrodes employed in a previous work, the source electrode of the device is split and placed at the two ends of the diffused source area. It works as a variable attenuator for differential signals controlled by its gate voltage. Controllable attenuation of more than 80 dB and harmonic distortion of less than 4% have been obtained.

• 社団法人応用物理学会の論文
• 1979-03-05

著者

• Hirabayashi Makoto

  Semiconductor Development Dep. Research Center Sony Corp.:(present Position)material Lab. Research C

関連論文

• Proposal and Study of Variable Distributed Parameter Devices (VDPD) : A-6: MOS FIELD EFFECT TRANSISTORS
• A New Field Effect Attenuator with Distributed Structure for Differential Signals

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