Anomalous Conductivity at Low Temperatures in an Si-MOSFET with Sub-Micron Gate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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YAGI Atsuo
Semiconductor Division, SONY Corpolation
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Yagi Atsuo
Semiconductor Division Sony Corporation
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Yagi Atsuo
Semiconductor Development Division Central Research Laboratory Sony Corporation
関連論文
- Effects of Silicon-Nitride Films on the Electronic Properties of Si-SiO_2 Interfaces
- Anomalous Conductivity at Low Temperatures in an Si-MOSFET with Sub-Micron Gate
- Magnetic and Electrical Properties of N-Channel MOS Hall-Effect Device