Reflectivity Measurements near the L_<2,3> Edge of p and n-type Silicon

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概要

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• Reflectivity spectra of p and heavily doped n-type silicon are measured at around 100 eV photon energy using synchrotron radiation as a light source. Reflectivity of n-type silicon is lower than that of p-type silicon in the range from 99.8 eV, the L_<2,3> absorption edge, up to 102 eV. A Kramers-Kronig analysis is applied to the spectra and optical constants, n and k, dielectric constants, ε_1 and ε_2, and absorption coefficients are obtained.

• 社団法人応用物理学会の論文
• 1975-02-05

著者

• IGUCHI Yasuo

  Institute of Applied Physics,University of Tsukuba

• FUJITA Hiizu

  RCA Research Laboratories, Inc.

• Fujita Hiizu

  Rca Research Laboratories Inc.

• Iguchi Yasuo

  Institute For Optical Research Tokyo University Of Education

• Iguchi Yasuo

  Institute For Optical Research Kyoiku University

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