Temperature Dependence of the Coercive Force and the Anisotropy Constant in MnBi Thin Film
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1973-09-05
著者
-
KOBAYASHI Kazuo
Fujitsu Laboratories, Ltd.
-
TANAKA Masao
FUJITSU LABORATORIES LTD.
-
Nishimura Yasuro
Fujitsu Laboratories Ltd.
-
Kobayashi Kazuo
Fujitsu Laboratories Ltd.
-
Tanaka Masao
Fujitsu Laboratories Ltd
関連論文
- The Effect of Repeated Operation on Electrochromism in an All-Solid-State Device Using Li-Doped MgF_2 Thin-Film Electrolyte
- Electrolysis in Electrochromic Devices Consisting of WO_3 and MgF_2 Thin Films
- Magneto-Optic Kerr Effect in RF Sputtered Co-Cr Film with Perpendicular Anisotropy
- Electrochromism in a Thin-Film Device Using Li_2 WO_4 as an Li-Electrolyte
- Mechanism of Spectral Sensitization of Zn0 Coadsorbing p-Type and n-Type Dyes
- Influence of Illumination on the Surface Potential of ZnO Adsorbing p-Type Dye and n-Type Dye
- Contact Potential Difference of ZnO Layer Adsorbing p-Type Dye and n-Type Dye
- Influence of Nonstoichiometric Surface Layer on Properties of CdS Films
- Highly Reproducible Hologram of Hardened Dichromated Gelatin Processed with HCl
- Temperature Dependence of the Coercive Force and the Anisotropy Constant in MnBi Thin Film
- Improvement of Tantalum Nitride Resistor Film Stability Through Analysis on Plateau Phenomena
- Phase Forming Processes in Tantalum Films through Sputtering
- Influences of Residual Gases on Magnetization of MnBi Thin Films
- Ceramic Surface Inspection Using Laser Technique : Diverse Measurements
- Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions
- A Novel Magnetic Tunneling Junction Shaped Cell with Large Write Operation Margin for High-Density Magnetoresistive Random Access Memory