Phase Forming Processes in Tantalum Films through Sputtering

概要

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For the formation of tantalum films by sputtering at a lower gas pressure, α-tantalum is deposited in a contaminative atmosphere, while β-tantalum is deposited in a clean atmosphere. The latter phenomenon can be thought of as the quenching of sputtered tantalum atoms by direct collision with the substrate when no layers of adsorbed impurity gas exist. At a higher pressure, the phase transition to β-Ta can be caused by the incorporation of discharge gas and thermal effect. For tantalum nitride, there is a certain region where the characteristics of the films are insensitive to the nitrogen partial pressure. The extent of nitrization is considered to be determined by the density ratio between the number of nitrogen molecules on the substrate and that of the incoming tantalum atoms. Within this region, the ratio is constant, so a stable film with a low energy state and stoichiometric structure whose main content is Ta_2N is formed.
社団法人応用物理学会の論文
1970-05-05