Improvement of Tantalum Nitride Resistor Film Stability Through Analysis on Plateau Phenomena

概要

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In order to obtain a tantalum nitride thin film resistor with excellent stability and various temperature coefficients (TCR), the relation between the deposition parameters in the diode sputtering and the characteristics of the films is investigated through their composition and micro-structure. The composition is considered to be determined by the ratio of the number of the tantalum atoms sputtered onto the substrate and that of the nitrogen molecules present. If it is assumed that the quantities of Ta_2N and TaN are formed proportionally to the nitrogen concentration in the sputtering atmosphere, and if Ta_2N plays the main role in the electron conduction, the so-called "plateau" will be originated. The aging characteristics of the thin film resistor are improved by the growth of Ta_2N crystallite accompanying the shift of the TCR towards the positive direction up to zero. The distinct growth of crystallite can be achieved under a higher sputtering voltage in a certain limited range of the nitrogen partial pressure.
社団法人応用物理学会の論文
1973-01-05