P-2: Improvement of Electrical Stability in the Poly-Si TFTs with Air Cavities at the Edges of the Gate Oxide(Poster Session)(Report on 2001 SID)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人映像情報メディア学会の論文
- 2001-07-19
著者
-
Lee M.C.
Seoul National Univ.
-
Han M.K.
Seoul National Univ.
-
Lee J.h.
Seoul National Univ.
-
Jung S.H.
Seoul National Univ.
-
Nam W.J.
Seoul National Univ.
関連論文
- P-1: A New TFT-LCD Panel with High Aperture Ratio and Small Signal Delay by Fabricating the TFT in the Line-Crossover(Poster Session)(Report on 2001 SID)
- P-2: Improvement of Electrical Stability in the Poly-Si TFTs with Air Cavities at the Edges of the Gate Oxide(Poster Session)(Report on 2001 SID)
- P-4 : N-channel Poly-Si TFTs Employing Low Temperature Excimer-Laser Doping with PSG films(Report on IDMC2000)
- 50. 2: A Novel Poly-Si TFTs with Selectively Doped Regions Fabricated by New Excimer Laser Annealing(2)Session 50, Poly-Si AMLCD Manufacturing)(Report on SID'01)