P-1: A New TFT-LCD Panel with High Aperture Ratio and Small Signal Delay by Fabricating the TFT in the Line-Crossover(Poster Session)(Report on 2001 SID)
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概要
- 論文の詳細を見る
- 社団法人映像情報メディア学会の論文
- 2001-07-19
著者
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Kim J.s.
Seoul National Univ.
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Park J.W.
Seoul National Univ.
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Lee M.C.
Seoul National Univ.
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Kim C.H.
Seoul National Univ.
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Han M.K.
Seoul National Univ.
関連論文
- P-1: A New TFT-LCD Panel with High Aperture Ratio and Small Signal Delay by Fabricating the TFT in the Line-Crossover(Poster Session)(Report on 2001 SID)
- 14-3 Reduction of Trap State Density and Improvement of Reliability in Poly-Si TFTs by In-situ Fluorine Passivation(4.Session 14:AMLCD 2)
- P-2: Improvement of Electrical Stability in the Poly-Si TFTs with Air Cavities at the Edges of the Gate Oxide(Poster Session)(Report on 2001 SID)
- 50. 2: A Novel Poly-Si TFTs with Selectively Doped Regions Fabricated by New Excimer Laser Annealing(2)Session 50, Poly-Si AMLCD Manufacturing)(Report on SID'01)