50. 2: A Novel Poly-Si TFTs with Selectively Doped Regions Fabricated by New Excimer Laser Annealing(2)Session 50, Poly-Si AMLCD Manufacturing)(Report on SID'01)

スポンサーリンク

概要

• 論文の詳細を見る
• 一般社団法人映像情報メディア学会の論文
• 2001-07-19

著者

• Lee M.C.

  Seoul National Univ.

• Lee M.c.

  Seoul National University

関連論文

• P-1: A New TFT-LCD Panel with High Aperture Ratio and Small Signal Delay by Fabricating the TFT in the Line-Crossover(Poster Session)(Report on 2001 SID)
• P-2: Improvement of Electrical Stability in the Poly-Si TFTs with Air Cavities at the Edges of the Gate Oxide(Poster Session)(Report on 2001 SID)
• 50. 2: A Novel Poly-Si TFTs with Selectively Doped Regions Fabricated by New Excimer Laser Annealing(2)Session 50, Poly-Si AMLCD Manufacturing)(Report on SID'01)

スポンサーリンク