Simulation Analysis of Negative Resistance Effect in OLED (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
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概要
- 論文の詳細を見る
A negative resistance phenomenon(NRP)in some polymer light emitting diodes(PLED)was observed and analyzed. This NRP appears in devices after long term storage without bias and disappear after consecutively scan the I-V curves over certain bias level. An internal reverse junction was proposed to interpret this NRP. In addition to the NRP, Hysteresis of I-V data over consecutive runs was also observed, similar to the effect frequently observed in non-crystalline inorganic semiconductors. Such field-drifting characteristics can be explained by carrier trapping mechanism.
- 社団法人映像情報メディア学会の論文
- 2000-10-20
著者
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Zhao Ying
Institute of Bioengineering and Nanotechnology
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Zhou Zhen-hua
Institute Of Photo-electronics Nankai University
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Zhao Ying
Institute Of Photo-electronics Nankai University
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Yu Gang
Uniax Corporation
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Wang Yao
Institute Of Photo-electronics Nankai University
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Hao Yun
Institute Of Photo-electronics Nankai University
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XIONG Shao-zhen
Institute of Photo-electronics, Nankai University
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WU Chun-ya
Institute of Photo-electronics, Nankai University
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Wu Chun-ya
Institute Of Photo-electronics Nankai University
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Wang Yao
Institute Of Hybrid Materials Laboratory Of New Fiber Materials And Modern Textile The Growing Base
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Xiong Shao-zhen
Institute Of Photo-electronics Nankai University
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