Simulation Analysis of Negative Resistance Effect in OLED

概要

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A negative resistance phenomenon(NRP)in some polymer light emitting diodes(PLED)was observed and analyzed. This NRP appears in devices after long term storage without bias and disappear after consecutively scan the I-V curves over certain bias level. An internal reverse junction was proposed to interpret this NRP. In addition to the NRP, Hysteresis of I-V data over consecutive runs was also observed, similar to the effect frequently observed in non-crystalline inorganic semiconductors. Such field-drifting characteristics can be explained by carrier trapping mechanism.
社団法人電子情報通信学会の論文
2000-10-13