Precise Linewidth Measurement Using a Scanning Electron Probe (Special Issue on Sub-Half Micron Si Device and Process Technologies)

概要

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Practical linewidth measurement accuracy better than 0.02 μm 3 sigma that meets the production requirement for devices with sub-half micron features, was achieved in a field emission scanning electron-beam metrology system (Hitachi S-7000). In order to establish high accuracy linewidth measurement, it was found in the study that reduction of electron-beam diameter and precise control of operating conditions are significantly effective. For the purpose of reducing electron-beam diameter, a novel electron optical system was adopted to minimize the chromatic aberration which defines electron-beam profile. As a result the electron beam diameter was reduced from nm to 16 nm. In order to reduce measurement uncertainties associated with actual operating conditions, a field emission electron gun geometry and an objective lens current monitor were investigated. Then the measurement uncertainties due to operating conditions was reduced from 0.016 μm to 0.004 μm.
社団法人電子情報通信学会の論文
1993-04-25