Non-integer Exponents in Electronic Circuits II: Memory Effects in the Fractal Immittance

概要

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The transient behavior in the fractal admittance acting as a non-integer-rank differential/integral operator, Y(s)∝s^a with -1<a<1 and a≠0, is examined from the point of view of memory effects by employing the distributed-ralaxation-time model. The internal state of the diode is found to be represented by the current spectrum i(λ,t) with respect to the carrier relaxation rate λ, leading to a general formulation of the long-time-tail memory behavior characteristic of the operator. One-to-one correspondence is found among the input voltage in the past v(-t), the short-circuit current i_<sc> (t) and the initial current spectrum i(λ,0) within the framework of the Laplace-type integral transformation and its inverse, assuring that each response retains in principle the entire information on the corresponding input, such as the functional form, the magnitude, the onset time, and so forth. The current and voltage responses are exemplified for various single-pulse voltage inputs. The responses to the pulse-train inputs corresponding to different ASCII codes are found to be properly discriminated between one another, showing the potentials of the present memory effects.
社団法人電子情報通信学会の論文
1994-04-25