Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model(<Special Issue>the IEEE International Conference on SISPAD '02)

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概要

• 論文の詳細を見る

• A TCAD implementation of a quantummechanical mobility model in the commercial device simulator DESSIS_<ISE>is presented. The model makes use of an integrated 1D Schrodinger-Poisson solver. Effective mobilities μ_<eff> and transfer characteristics are calculated for DGSOI MOSFETs with a wide range of silicon film thickness t_<Si> and buried-oxide thickness t_<box>. It is shown that the volume-inversion related enhancement of μ_<eff> for t_<Si> ≈ 10 nm is bound to symmetrical DGSOIs, whereas SIMOX based devices with thick buried oxides limit μ_<eff> to the bulk value. The still immature technology makes a conclusive comparison with experimental data impossible.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Schenk Andreas

  Institut Fur Integrierte Systeme Eth Zurich

• WETTSTEIN Andreas

  ISE Integrated Systems Engineering AG

関連論文

• Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model(the IEEE International Conference on SISPAD '02)
• On Density-Gradient Modeling of Tunneling through Insulators(the IEEE International Coference on SISPAD '02)
• Simulation of RF Noise in MOSFETs Using Different Transport Models
• TCAD Challenges for Heterostructure Microelectronics(Heterostructure Microelectronics with TWHM2003)

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